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| MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Features http://onsemi.com * * * * * * * * * Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package - Case 369C To Obtain "DPAK" in Straight Lead Version (Shipped in Sleeves): Add '1' Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available 12 3 Max Unit V 100 400 600 VRSM 150 450 650 IT(RMS) IT(AV) 2.6 1.6 ITSM 25 35 I2t PGM PG(AV) IGM TJ Tstg 2.6 0.5 0.1 0.2 -40 to +110 -40 to +150 A2sec W W A 1 2 3 4 4.0 A A V 1 2 3 SCRs 4.0 AMPERES RMS 100 - 600 VOLTS G A K MARKING DIAGRAMS 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TC = -40 to +110C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR706A MCR708A Peak Non-Repetitive Off-State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = -40 to +110C) MCR703A MCR706A MCR708A On-State RMS Current (180 Conduction Angles; TC = 90C) Average On-State Current (180 Conduction Angles) TC = -40 to +90C TC = +100C Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110C) (1/2 Sine Wave, 1.5 ms, TJ = 110C) Circuit Fusing (t = 8.3 msec) Forward Peak Gate Power (Pulse Width 1.0 msec, TC = 90C) Forward Average Gate Power (t = 8.3 msec, TC = 90C) Forward Peak Gate Current (Pulse Width 1.0 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM DPAK CASE 369C STYLE 2 YWW CR 70xAG 4 DPAK-3 CASE 369D STYLE 2 YWW CR 70xAG Y = Year WW = Work Week 70xA = Device Code x = 3, 6 or 8 G = Pb-Free Package PIN ASSIGNMENT Gate Anode Cathode Anode ORDERING INFORMATION A C C See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) Semiconductor Components Industries, LLC, 2006 1 November, 2007 - Rev. 7 Publication Order Number: MCR703A/D MCR703A Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 2. Case 369C when surface mounted on minimum pad sizes recommended. Symbol RqJC RqJA TL Max 8.33 80 260 Unit C/W C/W C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 KW) ON CHARACTERISTICS Peak Forward "On" Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 W) TC = 25C TC = -40C Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 W) TC = 25C TC = -40C VTM IGT - - VGT VGD IH - - VRGM IRGM tgt 10 - - - - 12.5 - 2.0 5.0 10 18 1.2 - V mA ms - - 0.2 25 - - - - 75 300 0.8 1.0 - V V mA - - 2.2 V mA IDRM, IRRM TC = 25C TC = 110C - - - - 10 200 mA Symbol Min Typ Max Unit Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 W, TC = 110C) Holding Current (VAK = 12 Vdc, Gate Open) TC = 25C (Initiating Current = 200 mA) TC = -40C Peak Reverse Gate Blocking Voltage (IGR = 10 mA) Peak Reverse Gate Blocking Current (VGR = 10 V) Total Turn-On Time (Source Voltage = 12 V, RS = 6 kW) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 kW, Exponential Waveform, TC = 110C) Repetitive Critical Rate of Rise of On-State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 ms, diG/dt = 1 A/ms) 3. RGK current not included in measurement. dv/dt di/dt - - 10 - - 100 V/ms A/ms ORDERING INFORMATION Device MCR703AT4 MCR703AT4G MCR706AT4 MCR706AT4G MCR708A MCR708AG MCR708A1 MCR708A1G MCR708AT4 MCR708AT4G Package Type DPAK DPAK DPAK DPAK DPAK DPAK DPAK-3 DPAK-3 DPAK DPAK Package 369C 369C (Pb-Free) 369C 369C (Pb-Free) 369C 369C (Pb-Free) 369D 369D (Pb-Free) 369C 369C (Pb-Free) Shipping 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 75 Units / Rail 75 Units / Rail 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR703A Series Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off-State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off-State Reverse Voltage Peak Reverse Blocking Current Peak On-State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV), AVERAGE POWER DISSIPATION (WATTS) 110 5.0 4.0 3.0 2.0 1.0 0 30C 60C 90C 120C 180C DC 30C 105 60C 90C 120C 180C DC 100 95 0 1.0 2.0 3.0 4.0 5.0 0 1.0 2.0 3.0 4.0 5.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25C Maximum @ TJ = 110C r(t) , TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 10 ZqJC(t) = RqJC(t)*r(t) Maximum @ TJ = 25C 0.1 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.01 0.1 1.0 10 100 1000 10,000 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 MCR703A Series 35 I GT, GATE TRIGGER CURRENT (m A) 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) -20 0 20 40 60 80 100 110 30 25 0.5 20 15 -40 0 -40 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IH , HOLDING CURRENT (mA) 1.5 IL , LATCHING CURRENT (mA) -20 0 20 40 60 80 100 110 1.5 1.0 1.0 0.5 0.5 0 -40 0 -40 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR703A Series PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T DIM A B C D E F G H J K L R S U V Z STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MCR703A Series PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MCR703A/D |
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